Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68039
DC FieldValueLanguage
dc.contributor.authorKao, C.C.en_US
dc.contributor.authorPeng, Y.C.en_US
dc.contributor.authorYao, H.H.en_US
dc.contributor.authorTsai, J.Y.en_US
dc.contributor.authorChang, Y.H.en_US
dc.contributor.authorChu, J.T.en_US
dc.contributor.authorHuang, H.W.en_US
dc.contributor.authorKao, T.T.en_US
dc.contributor.authorLu, T.C.en_US
dc.contributor.authorKuo, H.C.en_US
dc.contributor.authorWang, S.C.en_US
dc.contributor.authorLin, C.F.en_US
dc.date2005zh_TW
dc.date.accessioned2014-06-11T05:56:11Z-
dc.date.available2014-06-11T05:56:11Z-
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/68039-
dc.description.abstractGaN-based vertical-cavity surface emitting laser with 3 lambda cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm(2). The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%. (c) 2005 American Institute of Physics.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Physics Lettersen_US
dc.relation.ispartofseriesApplied Physics Letters, Volume 87, Issue 8.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.2032598en_US
dc.subjectcontinuous-waveen_US
dc.subjectdiodesen_US
dc.titleFabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflectoren_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.2032598zh_TW
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
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