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|標題:||High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array||作者:||Chen, Y.R.
|關鍵字:||ge islands;ion-beam||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 93, Issue 8.||摘要:||
The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4 x 10(9) cm(-2). Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs. (C) 2008 American Institute of Physics.
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