Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68046
標題: Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K
作者: Yao, J.H.
Li, S.C.
Lan, M.D.
Chin, T.S.
關鍵字: amorphous semiconductors;carrier density;Curie temperature;elemental;semiconductors;ferromagnetic materials;Hall effect;hydrogen;hydrogenation;magnetic susceptibility;magnetic thin films;magnetisation;manganese;semiconductor growth;semiconductor thin;films;semimagnetic semiconductors;silicon;spin waves;sputter;deposition;transmission electron microscopy;X-ray diffraction;semiconductor
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 94, Issue 7.
摘要: 
Structural, magnetic, and electrical properties were investigated of Mn-doped amorphous silicon films prepared by magnetron sputtering with and without hydrogen. Ferromagnetism at room temperature was observed and no clusters or second phases were detected from x-ray diffraction and high-resolution transmission electron microscopy analyses. Hydrogenation enhances saturation magnetization, carrier concentration, and Curie temperature by about 500%, 300%-500%, and 100 K, respectively. The M-T curve of hydrogenated sample fits very well by combination of Curie-Weiss law and three-dimensional spin-wave. Anomalous Hall effect was reproducibly obtained at 150 K. These suggest that the origin of ferromagnetism may arise from the carrier mediated mechanism.
URI: http://hdl.handle.net/11455/68046
ISSN: 0003-6951
DOI: 10.1063/1.3089247
Appears in Collections:期刊論文

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