Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68049
標題: Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures
作者: Wang, K.Y.
Huang, W.P.
Cheng, H.H.
Sun, G.
Soref, R.A.
Nicholas, R.J.
Suen, Y.W.
關鍵字: band alignment;photoluminescence;heterostructures;silicon;gap;alloys
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 91, Issue 7.
摘要: 
The authors report photoluminescence (PL) measurement on a series of Si/SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering. (C) 2007 American Institute of Physics.
URI: http://hdl.handle.net/11455/68049
ISSN: 0003-6951
DOI: 10.1063/1.2771094
Appears in Collections:期刊論文

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