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|標題:||Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures||作者:||Wang, K.Y.
|關鍵字:||band alignment;photoluminescence;heterostructures;silicon;gap;alloys||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 91, Issue 7.||摘要:||
The authors report photoluminescence (PL) measurement on a series of Si/SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering. (C) 2007 American Institute of Physics.
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