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|標題:||Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates||作者:||Lin, S.D.
|關鍵字:||short-period superlattices;electrons||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 81, Issue 16, Page(s) 3007-3009.||摘要:||
The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.
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