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|標題:||Bias voltage effect on the structure and property of the (Ti:Cu)-DLC films fabricated by cathodic arc plasma||作者:||Jao, J.Y.
|關鍵字:||Transmission electron microscope;Diamond-like carbon;Cathodic arc;evaporation;amorphous-carbon;field-emission;coatings;deposition||Project:||Diamond and Related Materials||期刊/報告no：:||Diamond and Related Materials, Volume 20, Issue 2, Page(s) 123-129.||摘要:||
Titanium copper-diamond-like carbon (Ti:Cu)-DLC films were deposited onto silicon via cathodic arc evaporation process using titanium (Ti) and copper (Cu) target arc sources to provide Ti and Cu in the metal containing diamond-like carbon (Me-DLC) film systen. Acetylene reactive gases served as the carbon sources, which were activated at 180 degrees C at 20 mTorr. Varying substrate bias voltages from -80 to -250 V were used in order to provide the (Ti:Cu)-DLC structure. The structure, interface, and mechanical properties of the produced film were analyzed by transmission electron microscope (TEM), IR Fourier transform (FTIR) spectra, and Rockwell C hardness. The process parameters were compared by studying the various mechanical properties of the films, such as microhardness and adhesion. The results showed that the Ti-containing a-C:H/Cu coatings exhibited an amorphous layer of Ti-DLC layer as well as a nanocrystalline layer of Cu multilayer structure. The mechanical properties of the coatings, as determined by Rockwell C indents testing and the ball-on-disc test. varied with the the applied negative DC bias voltage. These (Ti:Cu)-DLC coatings are promising materials for soft substrate protective coatings. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
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