Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68709
標題: Enhanced Lateral Heat Dissipation and Reduced Wavelength Shift of AlGaInP/GaAs Light Emitting Diodes by Electroplating
作者: Tsai, Y.J.
Hsu, C.P.
Hu, H.L.
Chen, J.F.
Chu, M.T.
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 13, Issue 6, Page(s) II216-II218.
摘要: 
We compare the device performance of a conventional light emitting diode (LED) module with that of an LED module after electroplating a lateral heat dissipation (LHD) structure along the sidewalls of the chip. At 350 mA, the luminous intensity of the proposed LED was enhanced by 207%. At the same current, the dominant and peak wavelength shifts of the LED exhibited a better performance of 2.1 and 4.4 nm, respectively, compared with the conventional performance of 7.2 and 23 nm. These results indicate that the LED with the LHD structure is useful in improving the performance by enabling greater heat dissipation. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3381885] All rights reserved.
URI: http://hdl.handle.net/11455/68709
ISSN: 1099-0062
DOI: 10.1149/1.3381885
Appears in Collections:期刊論文

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