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標題: | GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application | 作者: | Tsai, T.Y. Horng, R.H. Wuu, D.S. Ou, S.L. Hung, M.T. Hsueh, H.H. |
關鍵字: | light-emitting-diodes;vapor-phase epitaxy;island coalescence;c-sapphire;nucleation;fabrication;design;films | Project: | Electrochemical and Solid State Letters | 期刊/報告no:: | Electrochemical and Solid State Letters, Volume 14, Issue 11, Page(s) H434-H437. | 摘要: | GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The ((2) over bar 01) beta-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N-2 and H-2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and beta-Ga2O3 was identified as GaN[11 (2) over bar0]parallel to Ga2O3[010]. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002111esl] All rights reserved. |
URI: | http://hdl.handle.net/11455/68710 | ISSN: | 1099-0062 | DOI: | 10.1149/2.002111esl |
Appears in Collections: | 期刊論文 |
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