Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68710
標題: GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application
作者: Tsai, T.Y.
Horng, R.H.
Wuu, D.S.
Ou, S.L.
Hung, M.T.
Hsueh, H.H.
關鍵字: light-emitting-diodes;vapor-phase epitaxy;island coalescence;c-sapphire;nucleation;fabrication;design;films
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 14, Issue 11, Page(s) H434-H437.
摘要: 
GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The ((2) over bar 01) beta-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N-2 and H-2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and beta-Ga2O3 was identified as GaN[11 (2) over bar0]parallel to Ga2O3[010]. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002111esl] All rights reserved.
URI: http://hdl.handle.net/11455/68710
ISSN: 1099-0062
DOI: 10.1149/2.002111esl
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