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|標題:||GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application||作者:||Tsai, T.Y.
|關鍵字:||light-emitting-diodes;vapor-phase epitaxy;island coalescence;c-sapphire;nucleation;fabrication;design;films||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 14, Issue 11, Page(s) H434-H437.||摘要:||
GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The ((2) over bar 01) beta-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N-2 and H-2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and beta-Ga2O3 was identified as GaN[11 (2) over bar0]parallel to Ga2O3. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002111esl] All rights reserved.
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