Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68713
標題: Photocatalytic Activity and Electron Field Emission of Necked ZnO:Bi Nanowires
作者: Fang, C.W.
Wu, J.M.
Lee, L.T.
Yeh, H.H.
Wu, W.T.
Lin, Y.H.
Tsai, P.J.
Chen, Y.R.
關鍵字: thermal evaporation;raman-spectroscopy;oxide;photoluminescence;nanostructures;arrays;films;tio2
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 13, Issue 7, Page(s) K63-K66.
摘要: 
Bismuth-doped ZnO nanowires were synthesized by a vapor transfer process at 600 degrees C. Raman spectra revealed that a slight blueshift occurred in ZnO:Bi (438 cm(-1)) nanowires in contrast to ZnO (436 cm(-1)) nanowires. The X-ray photoelectron spectrum showed that the ZnO: Bi nanowires contained the Bi dopant as Bi(0) and Bi(3+). The turn-on fields of the ZnO: Bi and ZnO nanowires were similar to 4.19 and 6.57 V/mu m, respectively. Because the ZnO:Bi nanowires exhibited a redshift of absorbance spectrum with a high ratio in the UV range, the photocatalytic activities of ZnO: Bi nanowires were considered superior to those of ZnO nanowires. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3387638] All rights reserved.
URI: http://hdl.handle.net/11455/68713
ISSN: 1099-0062
DOI: 10.1149/1.3387638
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