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|標題:||Photocatalytic Activity and Electron Field Emission of Necked ZnO:Bi Nanowires||作者:||Fang, C.W.
|關鍵字:||thermal evaporation;raman-spectroscopy;oxide;photoluminescence;nanostructures;arrays;films;tio2||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 13, Issue 7, Page(s) K63-K66.||摘要:||
Bismuth-doped ZnO nanowires were synthesized by a vapor transfer process at 600 degrees C. Raman spectra revealed that a slight blueshift occurred in ZnO:Bi (438 cm(-1)) nanowires in contrast to ZnO (436 cm(-1)) nanowires. The X-ray photoelectron spectrum showed that the ZnO: Bi nanowires contained the Bi dopant as Bi(0) and Bi(3+). The turn-on fields of the ZnO: Bi and ZnO nanowires were similar to 4.19 and 6.57 V/mu m, respectively. Because the ZnO:Bi nanowires exhibited a redshift of absorbance spectrum with a high ratio in the UV range, the photocatalytic activities of ZnO: Bi nanowires were considered superior to those of ZnO nanowires. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3387638] All rights reserved.
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