Photocatalytic Activity and Electron Field Emission of Necked ZnO:Bi Nanowires

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68713

標題:	Photocatalytic Activity and Electron Field Emission of Necked ZnO:Bi Nanowires
作者:	Fang, C.W. Wu, J.M. Lee, L.T. Yeh, H.H. Wu, W.T. Lin, Y.H. Tsai, P.J. Chen, Y.R.
關鍵字:	thermal evaporation;raman-spectroscopy;oxide;photoluminescence;nanostructures;arrays;films;tio2
Project:	Electrochemical and Solid State Letters
期刊/報告no：:	Electrochemical and Solid State Letters, Volume 13, Issue 7, Page(s) K63-K66.
摘要:	Bismuth-doped ZnO nanowires were synthesized by a vapor transfer process at 600 degrees C. Raman spectra revealed that a slight blueshift occurred in ZnO:Bi (438 cm(-1)) nanowires in contrast to ZnO (436 cm(-1)) nanowires. The X-ray photoelectron spectrum showed that the ZnO: Bi nanowires contained the Bi dopant as Bi(0) and Bi(3+). The turn-on fields of the ZnO: Bi and ZnO nanowires were similar to 4.19 and 6.57 V/mu m, respectively. Because the ZnO:Bi nanowires exhibited a redshift of absorbance spectrum with a high ratio in the UV range, the photocatalytic activities of ZnO: Bi nanowires were considered superior to those of ZnO nanowires. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3387638] All rights reserved.
URI:	http://hdl.handle.net/11455/68713
ISSN:	1099-0062
DOI:	10.1149/1.3387638
Appears in Collections:	期刊論文

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