Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69060
標題: A Novel Coaxial-Structured Amorphous-Silicon p-i-n Solar Cell With Al-Doped ZnO Nanowires
作者: Li, H.H.
Yang, P.Y.
Chiou, S.M.
Liu, H.W.
Cheng, H.C.
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 32, Issue 7, Page(s) 928-930.
摘要: 
A novel coaxial-structured amorphous-silicon (a-Si) p-i-n solar cell with 1-mu m-long low-temperature hydrothermally synthesized Al-doped-ZnO (AZO) nanowires was demonstrated for the first time. The conversion efficiency. increased from 3.92% to 4.27% when the intrinsic a-Si thickness was increased from 25 to 150 nm and then decreased to 3.66% when the intrinsic layer thickness was further increased to 250 nm. It was attributed to an excessively thick intrinsic a-Si layer that would decrease the internal electrical field and interfere with charge separation. With the optimum intrinsic a-Si thickness of 150 nm, the conversion efficiency increased from 4.27% to 4.73% when the AZO wire length was increased from 1 to 2 mu m. Moreover, the proposed coaxial-structured solar cell exhibited a nearly 46% efficiency enhancement over a conventional a-Si thin-film solar cell.
URI: http://hdl.handle.net/11455/69060
ISSN: 0741-3106
DOI: 10.1109/led.2011.2146752
Appears in Collections:期刊論文

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