Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69065
標題: Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
作者: Huang, H.W.
Huang, J.K.
Lee, K.Y.
Lin, C.F.
Kuo, H.C.
關鍵字: Gallium nitride (GaN);light-emitting diodes (LEDs);photonic;quasi-crystal (PQC);lateral overgrowth;sapphire;efficiency;fabrication
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 31, Issue 6, Page(s) 573-575.
摘要: 
GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.
URI: http://hdl.handle.net/11455/69065
ISSN: 0741-3106
DOI: 10.1109/led.2010.2045218
Appears in Collections:期刊論文

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.