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|標題:||Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FET's for power application||作者:||Lu, S.S.
|關鍵字:||channel||Project:||Ieee Electron Device Letters||期刊/報告no：:||Ieee Electron Device Letters, Volume 20, Issue 1, Page(s) 21-23.||摘要:||
Single-voltage-supply operation of insulated-gate FET's using Ga0.51In0.49P/In0.15Ga0.85As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate voltage up to 2 V without significant drain current compression. Because of this high gate operating voltage, single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FET's was achieved. Preliminary results show that for a 1-mu m gate length device operated at 1.8 GHz under class A-bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated power with a power added efficiency of 30% when drain voltage is 4.8 V.
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