Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69074
標題: Effect of Crystalline Quality on Photovoltaic Performance for In0.17Ga0.83As Solar Cell Using X-Ray Reciprocal Space Mapping
作者: Tseng, M.C.
Horng, R.H.
Wuu, D.S.
Yang, M.D.
關鍵字: InGaAs crystalline quality;solar cell;X-Ray reciprocal space mapping;strain relaxation;substrate misorientation;gallium-arsenide;epitaxial;layers;gaas;growth;dislocations;topography;density;diode
Project: Ieee Journal of Quantum Electronics
期刊/報告no:: Ieee Journal of Quantum Electronics, Volume 47, Issue 11, Page(s) 1434-1442.
摘要: 
This paper presents the In0.17Ga0.83As solar cell grown on misoriented GaAs substrate (2 degrees- and 15 degrees-off) by metalorganic chemical vapor deposition. The crystalline quality of the In0.17Ga0.83As solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of In0.17Ga0.83As solar cell grown on 2 degrees-off GaAs substrate is better than that of 15 degrees-off GaAs substrate. Moreover, the photovoltaic performance of In0.17Ga0.83As solar cell grown on 2 degrees-off GaAs substrate is found to be better than that of In0.17Ga0.83As solar cell grown on a 15 degrees-off GaAs substrate, because the InxGa1-xAs epilayer grown on 15 degrees-off GaAs substrate shows a large strain relaxation in the active layer of the solar cell. A large strain relaxation causes high dislocation density at the initial active layer/InxGa1-xAs graded layer interface for the solar cell grown on 15 degrees-off GaAs substrate. The effect of dislocation defects on the solar cell performance can be alleviated using the p-i-n structure as the epilayer grown on 15 degrees-off GaAs substrate.
URI: http://hdl.handle.net/11455/69074
ISSN: 0018-9197
DOI: 10.1109/jqe.2011.2166535
Appears in Collections:期刊論文

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