Please use this identifier to cite or link to this item:
|標題:||Effect of Crystalline Quality on Photovoltaic Performance for In0.17Ga0.83As Solar Cell Using X-Ray Reciprocal Space Mapping||作者:||Tseng, M.C.
|關鍵字:||InGaAs crystalline quality;solar cell;X-Ray reciprocal space mapping;strain relaxation;substrate misorientation;gallium-arsenide;epitaxial;layers;gaas;growth;dislocations;topography;density;diode||Project:||Ieee Journal of Quantum Electronics||期刊/報告no：:||Ieee Journal of Quantum Electronics, Volume 47, Issue 11, Page(s) 1434-1442.||摘要:||
This paper presents the In0.17Ga0.83As solar cell grown on misoriented GaAs substrate (2 degrees- and 15 degrees-off) by metalorganic chemical vapor deposition. The crystalline quality of the In0.17Ga0.83As solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of In0.17Ga0.83As solar cell grown on 2 degrees-off GaAs substrate is better than that of 15 degrees-off GaAs substrate. Moreover, the photovoltaic performance of In0.17Ga0.83As solar cell grown on 2 degrees-off GaAs substrate is found to be better than that of In0.17Ga0.83As solar cell grown on a 15 degrees-off GaAs substrate, because the InxGa1-xAs epilayer grown on 15 degrees-off GaAs substrate shows a large strain relaxation in the active layer of the solar cell. A large strain relaxation causes high dislocation density at the initial active layer/InxGa1-xAs graded layer interface for the solar cell grown on 15 degrees-off GaAs substrate. The effect of dislocation defects on the solar cell performance can be alleviated using the p-i-n structure as the epilayer grown on 15 degrees-off GaAs substrate.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.