Coupling effect of on-chip, inductor with variable metal width

Abstract

This study proposes a proper layout of on-chip inductors to diminish the coupling effect in silicon-based technology. Keeping self inductance constant, the mutual inductance is measured to characterize coupling effect in three test keys. A layout with variable metal width of inductor is found to alleviate mutual inductance. Experiment results demonstrate the mutual inductance decreases 33.5% compared with standard layout. This information will be helpful in implementation of more than one inductor into radio frequency integrated circuits (RFICs).