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|標題:||Coupling effect of on-chip, inductor with variable metal width||作者:||Hsu, H.M.
|關鍵字:||coupling;inductor;integrated circuits (ICs);planar inductor;spiral inductors;design;improvement;amplifier;silicon||Project:||Ieee Microwave and Wireless Components Letters||期刊/報告no：:||Ieee Microwave and Wireless Components Letters, Volume 17, Issue 7, Page(s) 498-500.||摘要:||
This study proposes a proper layout of on-chip inductors to diminish the coupling effect in silicon-based technology. Keeping self inductance constant, the mutual inductance is measured to characterize coupling effect in three test keys. A layout with variable metal width of inductor is found to alleviate mutual inductance. Experiment results demonstrate the mutual inductance decreases 33.5% compared with standard layout. This information will be helpful in implementation of more than one inductor into radio frequency integrated circuits (RFICs).
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