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|標題:||Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls||作者:||Kao, C.C.
|關鍵字:||etching profile;GaN;light-emitting diode (LED);light extraction;efficiency;extraction efficiency;ingan;surface;blue||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 17, Issue 1, Page(s) 19-21.||摘要:||
We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
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