Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69088
標題: Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
作者: Fu, Y.K.
Chen, B.C.
Fang, Y.H.
Jiang, R.H.
Lu, Y.H.
Xuan, R.
Huang, K.F.
Lin, C.F.
Su, Y.K.
Chen, J.F.
Chang, C.Y.
關鍵字: Chemical wet-etching;GaN;light extraction;near-ultraviolet (NUV);light-emitting diode (LED);nitride;surface;efficiency
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 23, Issue 19, Page(s) 1373-1375.
摘要: 
The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {10 (11) over bar} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.
URI: http://hdl.handle.net/11455/69088
ISSN: 1041-1135
DOI: 10.1109/lpt.2011.2161276
Appears in Collections:期刊論文

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