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|標題:||The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors||作者:||Kao, C.C.
|關鍵字:||AlN;distributed Bragg reflector (DBR);GaN;vertical-cavity;surface-emitting laser (VCSEL);spontaneous emission;continuous-wave;blue;diodes;performance||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 18, Issue 5-8, Page(s) 877-879.||摘要:||
The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
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