Please use this identifier to cite or link to this item:
標題: The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
作者: Kao, C.C.
Lu, T.C.
Huang, H.W.
Chu, J.T.
Peng, Y.C.
Yao, H.H.
Tsai, J.Y.
Kao, T.T.
Kuo, H.C.
Wang, S.C.
Lin, C.F.
關鍵字: AlN;distributed Bragg reflector (DBR);GaN;vertical-cavity;surface-emitting laser (VCSEL);spontaneous emission;continuous-wave;blue;diodes;performance
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 18, Issue 5-8, Page(s) 877-879.
The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
ISSN: 1041-1135
DOI: 10.1109/lpt.2006.871814
Appears in Collections:期刊論文

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.