Please use this identifier to cite or link to this item:
|標題:||Characteristics of High-T-c Josephson Junction Fabricated by Focused Ion Beam and Ion Damage||作者:||Wu, C.H.
|關鍵字:||Focused ion beam;ion implantation;Josephson junction;SQUID;quantum interference devices;thin-films;nanolithography;superconductors;arrays;pairs||Project:||Ieee Transactions on Applied Superconductivity||期刊/報告no：:||Ieee Transactions on Applied Superconductivity, Volume 19, Issue 3, Page(s) 210-213.||摘要:||
A high-T-c Josephson junction and superconducting quantum interference devices (SQUIDs) were fabricated by focused ion beam (FIB) milling and 150 keV oxygen ion implantation. A single layer gold mask with a small aperture of 28-73 nm defined by direct milling with FIB, was used. The voltage versus current characteristics of high-T-c YBa2Cu3O7-x Josephson junctions were measured under microwaves. Shapiro steps were observed in the single junction. The voltage versus current and voltage versus magnetic field characteristics of a SQUID were measured.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.