Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69105
標題: Characteristics of High-T-c Josephson Junction Fabricated by Focused Ion Beam and Ion Damage
作者: Wu, C.H.
Kuo, W.C.
Chou, Y.T.
Chen, J.H.
Yang, H.C.
關鍵字: Focused ion beam;ion implantation;Josephson junction;SQUID;quantum interference devices;thin-films;nanolithography;superconductors;arrays;pairs
Project: Ieee Transactions on Applied Superconductivity
期刊/報告no:: Ieee Transactions on Applied Superconductivity, Volume 19, Issue 3, Page(s) 210-213.
摘要: 
A high-T-c Josephson junction and superconducting quantum interference devices (SQUIDs) were fabricated by focused ion beam (FIB) milling and 150 keV oxygen ion implantation. A single layer gold mask with a small aperture of 28-73 nm defined by direct milling with FIB, was used. The voltage versus current characteristics of high-T-c YBa2Cu3O7-x Josephson junctions were measured under microwaves. Shapiro steps were observed in the single junction. The voltage versus current and voltage versus magnetic field characteristics of a SQUID were measured.
URI: http://hdl.handle.net/11455/69105
ISSN: 1051-8223
DOI: 10.1109/tasc.2009.2018366
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