Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69135
標題: Analytical formula for inductance of metal of various widths in spiral inductors
作者: Hsu, H.M.
關鍵字: analytical formula;calculation of inductance;spiral inductor;variable;metal width;rf integrated inductors;quality factor;design;silicon;gaas
Project: Ieee Transactions on Electron Devices
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 51, Issue 8, Page(s) 1343-1346.
摘要: 
This letter presents an analytical formula for the inductance of an inductor with the layout of variable metal width, based on the quasi-static approximation. Experimental results indicate that the analytical formula is feasible. A layout with metal whose width increases a monotonously from the inner turn has a higher Q value than other configurations of the metal with the same inductance. This information will be help in designing high-performance inductors for RF integrated circuit applications.
URI: http://hdl.handle.net/11455/69135
ISSN: 0018-9383
DOI: 10.1109/ted.2004.832094
Appears in Collections:期刊論文

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