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http://hdl.handle.net/11455/69135| 標題: | Analytical formula for inductance of metal of various widths in spiral inductors | 作者: | Hsu, H.M. | 關鍵字: | analytical formula;calculation of inductance;spiral inductor;variable;metal width;rf integrated inductors;quality factor;design;silicon;gaas | Project: | Ieee Transactions on Electron Devices | 期刊/報告no：: | Ieee Transactions on Electron Devices, Volume 51, Issue 8, Page(s) 1343-1346. | 摘要: | This letter presents an analytical formula for the inductance of an inductor with the layout of variable metal width, based on the quasi-static approximation. Experimental results indicate that the analytical formula is feasible. A layout with metal whose width increases a monotonously from the inner turn has a higher Q value than other configurations of the metal with the same inductance. This information will be help in designing high-performance inductors for RF integrated circuit applications. |
URI: | http://hdl.handle.net/11455/69135 | ISSN: | 0018-9383 | DOI: | 10.1109/ted.2004.832094 |
| Appears in Collections: | 期刊論文 |
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