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|標題:||Analytical formula for inductance of metal of various widths in spiral inductors||作者:||Hsu, H.M.||關鍵字:||analytical formula;calculation of inductance;spiral inductor;variable;metal width;rf integrated inductors;quality factor;design;silicon;gaas||Project:||Ieee Transactions on Electron Devices||期刊/報告no：:||Ieee Transactions on Electron Devices, Volume 51, Issue 8, Page(s) 1343-1346.||摘要:||
This letter presents an analytical formula for the inductance of an inductor with the layout of variable metal width, based on the quasi-static approximation. Experimental results indicate that the analytical formula is feasible. A layout with metal whose width increases a monotonously from the inner turn has a higher Q value than other configurations of the metal with the same inductance. This information will be help in designing high-performance inductors for RF integrated circuit applications.
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