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|標題:||Implementation of high-coupling and broadband transformer in RFCMOS technology||作者:||Hsu, H.M.||關鍵字:||analytical formula;broadband;calculation of mutual inductance;high;coupling;silicon-based;transformer;monolithic transformers;inductors;silicon;design||Project:||Ieee Transactions on Electron Devices||期刊/報告no：:||Ieee Transactions on Electron Devices, Volume 52, Issue 7, Page(s) 1410-1414.||摘要:||
This paper proposes a structure for transformer with high-coupling, broadband, and small chip area characteristics using current silicon-based technology. The proposed device has tight coupling (kappa = 0.92), wide bandwidth (f(SR) = 30.8 GHz), and minimum chip area (OD = 140 mu m). Furthermore, the analytical formula for calculating mutual inductance is derived in this study; experimental results indicate that the analytical formula is feasible. The proposed transformer will be useful in designing high-performance RF integrated circuits for wireless applications.
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