Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69141
標題: Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications
作者: Horng, R.H.
Tseng, M.C.
Wu, F.L.
Li, C.H.
Wu, C.H.
Yang, M.D.
關鍵字: Epitaxial lift-off (ELO);recycled substrate;thin film solar cell;layer
Project: Ieee Transactions on Electron Devices
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 59, Issue 3, Page(s) 666-672.
摘要: 
This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.
URI: http://hdl.handle.net/11455/69141
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2177986
Appears in Collections:期刊論文

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