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|標題:||Exchange bias between ZnCoO and IrMn||作者:||Huang, P.H.
|關鍵字:||dilute magnetic semiconductor (DMS);exchange bias;IrMn;ZnCoO;epitaxy||Project:||Ieee Transactions on Magnetics||期刊/報告no：:||Ieee Transactions on Magnetics, Volume 42, Issue 10, Page(s) 3014-3016.||摘要:||
High-quality epitaxial ZnCo0.07O films deposited at room temperature were obtained by using reactive ion beam sputtering. Room-temperature ferromagnetic behavior of ZnCoO was observed with a coercivity of 70 Oe. We observed the loop shift at 5 K in the field-cooled samples of ZnCoO/Cu/IrMn and an enhanced coercivity in the zero-field-cooled samples, which indicated the existence of exchange coupling between ZnCoO and IrMn through a thin Cu layer (0.15 nm). Furthermore, the exchange field of ZnCoO was increased from 55 to 113 Oe by increasing the cooling field from 3 to 15 kOe.
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