Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69160
標題: Exchange bias between ZnCoO and IrMn
作者: Huang, P.H.
Lai, C.H.
Yang, C.A.
Huang, H.H.
Chin, T.S.
Chen, C.H.
Lan, M.D.
Huang, H.E.
Bor, H.Y.
關鍵字: dilute magnetic semiconductor (DMS);exchange bias;IrMn;ZnCoO;epitaxy
Project: Ieee Transactions on Magnetics
期刊/報告no:: Ieee Transactions on Magnetics, Volume 42, Issue 10, Page(s) 3014-3016.
摘要: 
High-quality epitaxial ZnCo0.07O films deposited at room temperature were obtained by using reactive ion beam sputtering. Room-temperature ferromagnetic behavior of ZnCoO was observed with a coercivity of 70 Oe. We observed the loop shift at 5 K in the field-cooled samples of ZnCoO/Cu/IrMn and an enhanced coercivity in the zero-field-cooled samples, which indicated the existence of exchange coupling between ZnCoO and IrMn through a thin Cu layer (0.15 nm). Furthermore, the exchange field of ZnCoO was increased from 55 to 113 Oe by increasing the cooling field from 3 to 15 kOe.
URI: http://hdl.handle.net/11455/69160
ISSN: 0018-9464
DOI: 10.1109/tmag.2006.879757
Appears in Collections:期刊論文

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