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|標題:||The Ferroelectric and Magnetic Properties of Sol-Gel-Derived (Bi0.85Eu0.15FeO3/Bi3.2Y0.8Ti3O12) Bilayer Thin Films||作者:||Chen, H.Z.
|關鍵字:||Ferroelectric;magnetic;multiferroic;remnant magnetization||Project:||Ieee Transactions on Magnetics||期刊/報告no：:||Ieee Transactions on Magnetics, Volume 47, Issue 10, Page(s) 2788-2791.||摘要:||
The Bi0.85Eu0.15FeO3/Bi3.2Y0.8Ti3O12 bilayer thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using the sol-gel process and annealed by rapid thermal annealing in various annealing environments (ambient atmosphere and oxygen). The multiferroic/ferroelectric bilayer thin films were composed of 0.8-mu m thickness Bi0.85Eu0.15FeO3 and 0.2-mu m thickness of Bi3.2Y0.8Ti3O12 thin film. The effects of annealing atmospheres (ambient atmosphere and oxygen) on the growth and properties of thin films were investigated. The results show that the intensities of the (117) diffraction peak of Bi3.2Y0.8Ti3O12 film and (110) diffraction peak of Bi0.85Eu0.15FeO3 annealed in oxygen is stronger than those annealed in an ambient atmosphere. The Bi0.85Eu0.15FeO3/Bi3.2Y0.8Ti3O12 bilayer thin films annealed in the oxygen atmosphere exhibit the maximum remanent polarization (2P(r)) and remnant magnetization (2Mr) of 26 mu C/cm(2) and 3.44 emu/g, respectively. The improved magnetic and ferroelectric properties can be attributed to the elimination of defects, such as oxygen vacancy and vacancy complexes.
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