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標題: Direct observation of silver atoms on Si(111)-7 x 7 surfaces
作者: Ho, M.S.
Su, C.C.
Tsong, T.T.
關鍵字: scanning tunneling microscopy (STM);silicon;silver;surface dynamics;scanning-tunneling-microscopy;cu/si(111) quasi-5x5 overlayer;si atoms;ag;growth;au;cu;au/si(111);diffusion;phase
Project: Ieee Transactions on Nanotechnology
期刊/報告no:: Ieee Transactions on Nanotechnology, Volume 5, Issue 5, Page(s) 530-534.
The dynamics of single silver atoms adsorbed on the Si(111)-7 x 7 surface has been studied between 300 K and 423 K with a variable-temperature scanning tunneling microscope. We discuss the diffusion behavior of one and two silver atoms when they diffuse into a half unit cell of the 7 x 7 reconstructed Si(111) surface. Detailed tracking of the movements of individual silver atoms within a 7 x 7 half unit cell was done at similar to 80 K. The activation energies and preexponential factors for different diffusion paths were estimated. Finally, possible mechanisms of silver atom diffusion on the Si(111)-7 x 7 surface are proposed based on both our data and those recently published by others.
ISSN: 1536-125X
DOI: 10.1109/tnano.2006.880443
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