Please use this identifier to cite or link to this item:
|標題:||Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix||作者:||Lin, T.C.
|關鍵字:||radiative recombination;optical-properties;heterostructures;wells||Project:||Journal of Applied Physics||期刊/報告no：:||Journal of Applied Physics, Volume 108, Issue 12.||摘要:||
The magneto-optical response of type-II tensily strained GaAs self-assembled quantum dots in GaSb was investigated in magnetic fields up to 14 T. By depositing different GaAs amount, the dot sizes and the corresponding emission energies were varied. We analyzed the carrier wave function extent of different dots using the diamagnetic shift results. It was found that, with the increase in the energy (the reduction in the dot size), the diamagnetic coefficient first rises quickly and then saturates at around 21 mu eV/T(2). Based on a simple calculation model, this unusual tendency is attributed to the electrons gradually spilling out of the quantum dot to the wetting layer as the dots get smaller. This delocalization effect is enhanced in this material system due to the tensile strain relaxation within the dots, which raises the conduction band edge over that in the wetting layer. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3520669]
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.