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|標題:||Reduced-Ripple p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Charge Pump Circuit with Small Filtering Capacitance||作者:||Jaw, B.Y.
|Project:||Japanese Journal of Applied Physics||期刊/報告no：:||Japanese Journal of Applied Physics, Volume 51, Issue 2.||摘要:||
This paper presents a two-stage, two-phase, p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) charge pump with special two-step clocks for ripple reduction. The ripple voltage can be reduced by adjusting the overdrive voltage during charge transfer. The charge pump including the circuit of the proposed clocks and 5 pF boosting capacitance was fabricated using 0.35 mu m complementary metal-oxide-semiconductor field-effect transistor (CMOSFET) technology in an area of 0.182 mm(2). With the new clock scheme, high voltage gain and driving capacity without overstress of the transistors are preserved. The experimental results reveal that the output voltage ripple is reduced from 23.2 to 12.8mV for an output current of 36 mu A at a frequency of 10MHz and a supply voltage of 1.8 V, which indicates a 45% ripple reduction without increasing filtering capacitance. (C) 2012 The Japan Society of Applied Physics
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