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|標題:||Fast grain growth of metal-induced lateral crystallization of amorphous silicon using rapid energy transfer annealing||作者:||Jiang, Y.L.
|關鍵字:||grain growth;nickel metal-induced lateral crystallization (MILC);amorphous silicon;rapid energy transfer annealing;polysilicon;mediated crystallization;thin-films;polysilicon||Project:||Japanese Journal of Applied Physics Part 2-Letters||期刊/報告no：:||Japanese Journal of Applied Physics Part 2-Letters, Volume 42, Issue 12A, Page(s) L1416-L1418.||摘要:||
In this work, we examine the acceleration of the grain growth of the nickel (Ni) metal-induced lateral crystallization (MILL) of amorphous silicon by rapid energy transfer annealing (RETA). An extremely high grain growth rate, exceeding 3.4mum/min, was obtained using five pulses of RETA annealing, since nickel silicide mediated faster grain growth than that obtained by random nucleation, and the metastable internal energy of the a-Si film was relaxed at a high temperature. Transmission electron microscopy (TEM) images and energy dispersive X-ray (EDX) spectra reveal that the laterally crystallized polysilicon regions incorporate large grains with little contamination by residual Ni atoms.
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