Please use this identifier to cite or link to this item:
|標題:||Rapid and efficient recrystallization and activation of implanted phosphorus doping in laser-annealed polysilicon by rapid energy transfer annealing||作者:||Jiang, Y.L.
|關鍵字:||implanted dopant phosphorus atoms;laser-annealed polysilicon films;rapid energy transfer annealing;amorphous silicon films;polysilicon;films;thin-film transistors;amorphous-silicon;ion-source;crystallization;tfts||Project:||Japanese Journal of Applied Physics Part 2-Letters||期刊/報告no：:||Japanese Journal of Applied Physics Part 2-Letters, Volume 42, Issue 12B, Page(s) L1498-L1500.||摘要:||
Phosphorus atoms that are implanted as dopants in laser-annealed polysilicon films are recrystallized and activated by rapid energy transfer annealing (RETA). After five pulses of RETA annealing, with a total process time of 90 s, the implanted, damaged amorphous silicon films are fully recrystallized into polysilicon films. Transmission electron microscopic images clearly reveal that these amorphous regions fully recover the original grain structure and the surface topography of the polysilicon film preceding implantation. The current versus voltage (I-V) measurements demonstrate that the implanted phosphorus atoms are efficiently activated. The sheet resistance of the annealed film after annealing is approximately 280 Omega/ square, which is around the same order as obtained for excimer laser-annealed films.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.