Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69882
標題: MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
作者: Chang, Y.A.
Chu, J.T.
Ko, C.T.
Kuo, H.C.
Lin, C.F.
Wang, S.C.
關鍵字: metalorganic chemical vapor deposition;InGaAs : Sb;semiconductor;laser diodes;optical fiber devices;VCSELs;1.3 mu-m;sb surfactant;m emission;gainnas;epitaxy
Project: Journal of Crystal Growth
期刊/報告no:: Journal of Crystal Growth, Volume 287, Issue 2, Page(s) 550-553.
摘要: 
In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/69882
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.10.030
Appears in Collections:期刊論文

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