Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70067
標題: Effect of GePt buffer layer on magnetic properties and microstructure of FePt films
作者: Tsai, J.L.
Hsu, C.J.
Pai, Y.H.
Shieu, F.S.
Hsu, C.W.
Chen, S.K.
Chang, W.C.
關鍵字: Coercivity;Ordered L1(0) FePt;Diffusion;Ge2Pt3 underlayer
Project: Journal of Magnetism and Magnetic Materials
期刊/報告no:: Journal of Magnetism and Magnetic Materials, Volume 303, Issue 2, Page(s) E258-E260.
摘要: 
We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L1(0) FePt phase. In Ge/FePt bilayer, the Ge3Pt2 compound was formed during post annealing at 400 degrees C for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L1(0) FePt phase. With Ge2Pt3 underlayer, the FePt film was ordered at 400 degrees C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 degrees C compared to the single layer FePt film. (C) 2006 Elsevier B. V. All rights reserved.
URI: http://hdl.handle.net/11455/70067
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2006.01.069
Appears in Collections:期刊論文

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