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標題: An on-chip transformer in silicon-based technology
作者: Hsu, H.M.
Tsai, M.C.
Huang, K.H.
關鍵字: inductors;design;implementation;substrate;cmos
Project: Journal of Micromechanics and Microengineering
期刊/報告no:: Journal of Micromechanics and Microengineering, Volume 17, Issue 8, Page(s) 1504-1510.
The comprehensive characterization of a four-port transformer is investigated in this paper. The contents include the figure-of-merit, differential excitation and layout types. The coupling coefficient is added to the performance index of the transformer to characterize the device behavior. A foundry 90 nm CMOS technology is adopted to fabricate the on-chip transformers. Hence, the four-port measurement setup is executed to characterize the differential connection of the transformer. Furthermore, the layouts by maintaining identical self-inductance for both the planar and stack types are compared in the following items: coupling coefficient, transfer efficiency and chip area. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers to investigate the high-frequency performance.
ISSN: 0960-1317
DOI: 10.1088/0960-1317/17/8/012
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