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|標題:||An on-chip transformer in silicon-based technology||作者:||Hsu, H.M.
|關鍵字:||inductors;design;implementation;substrate;cmos||Project:||Journal of Micromechanics and Microengineering||期刊/報告no：:||Journal of Micromechanics and Microengineering, Volume 17, Issue 8, Page(s) 1504-1510.||摘要:||
The comprehensive characterization of a four-port transformer is investigated in this paper. The contents include the figure-of-merit, differential excitation and layout types. The coupling coefficient is added to the performance index of the transformer to characterize the device behavior. A foundry 90 nm CMOS technology is adopted to fabricate the on-chip transformers. Hence, the four-port measurement setup is executed to characterize the differential connection of the transformer. Furthermore, the layouts by maintaining identical self-inductance for both the planar and stack types are compared in the following items: coupling coefficient, transfer efficiency and chip area. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers to investigate the high-frequency performance.
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