Please use this identifier to cite or link to this item:
|標題:||Fabrication of an ultrathin silicon wafer with a honeycomb structure by the thermal-stress-induced pattern transfer (TIPT) method||作者:||Wang, T.Y.
|關鍵字:||solar-cells||Project:||Journal of Micromechanics and Microengineering||期刊/報告no：:||Journal of Micromechanics and Microengineering, Volume 22, Issue 5.||摘要:||
A 3 mu m thick silicon thin film with a textured surface was fabricated successfully by three major steps. First, the silicon thin film was deposited on a sapphire substrate by a plasma-enhanced chemical vapor deposition system. Second, metal paste was printed on the silicon thin film. Third, a thermal treatment was applied on the sapphire substrate. After cooling, the silicon layer, combined with the metal paste, was peeled from the sapphire substrate because of the large differences in the thermal expansion coefficient between the silicon-metal composite layer and the sapphire substrate. An ultrathin silicon wafer of 3 mu m thickness was obtained in this study. Furthermore, a silicon layer with a micro-scale and a nano-scale honeycomb structures can be obtained easily by transferring patterns from the well-designed patterned sapphire substrate.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.