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|標題:||Formation of Epitaxial NiSi2 Nanowires on Si(100) Surface by Atomic Force Microscope Nanolithography||作者:||Hsu, H.F.
|關鍵字:||Atomic Force Microscope Nanolithography;Nickel Silicide;Nanowire;titanium silicide nanowires;lift-off process;metallic nanostructures;initial growth;nanodot arrays;fabrication;lithography;islands;si(111);si(001)||Project:||Journal of Nanoscience and Nanotechnology||期刊/報告no：:||Journal of Nanoscience and Nanotechnology, Volume 10, Issue 7, Page(s) 4533-4537.||摘要:||
Ni nanowries were fabricated by atomic force microscope nanolithography, evaporation, lift-off and annealing processes. Epitaxial NiSi2 nanowires on a Si(100) surface along Si < 110 > and < 100 > directions were formed by the rapid thermal annealing treatment of the Ni nanowires at 400 degrees C. The silicide nanowires along the Si < 110 > direction had coherent type-A Si(111) and Si(100) interfaces, while those along the Si < 100 > direction had a type-A Si(110) interface. Silicide nanowires were agglomerated when the Ni nanowires were annealed at high temperature (>= 500 degrees C). The mechanism of formation of a faceted nanowire was discussed based on the minimization of the total surface energy.
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