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|標題:||Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth||作者:||Huang, H.W.
|關鍵字:||GaN;Light Emitting Diodes (LEDs);Photonic Quasi-Crystal (PQC);Nano-Imprint Lithography (NIL);lateral overgrowth;sapphire;fabrication||Project:||Journal of Nanoscience and Nanotechnology||期刊/報告no：:||Journal of Nanoscience and Nanotechnology, Volume 10, Issue 10, Page(s) 6363-6368.||摘要:||
In this paper, GaN-based LEDs with a SiO(2) photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO(2) PQC pattern (LED III (d = 1.2 mu m)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
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