Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70460
標題: Low Temperature Hydrothermal Synthesis and the Growth Kinetics of BaTiO3 Films on TiN/Si, Ti/Si, and Bulk-Ti Substrates
作者: Chan, P.H.
Lu, F.H.
關鍵字: barium-titanate films;plasma electrolytic oxidation;titanium;metal-substrate;thin-films;electrochemical method;phase-change;silicon;microstructure;mechanisms;pbtio3
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 157, Issue 6, Page(s) G130-G135.
摘要: 
Barium titanate (BaTiO3) films were prepared on TiN- and Ti-coated Si as well as bulk-Ti substrates by a hydrothermal method at temperatures below 100 degrees C. Both titanium nitride and titanium films prepared by dc sputtering exhibited nanograins, while bulk titanium possessed micrograins. These substrates were soaked in a mixture of Ba(CH3COO)(2) and NaOH alkaline solutions at temperatures below 100 degrees C for various times. X-ray diffraction patterns show that cubic BaTiO3 films were successfully formed on TiN/Si and Ti/Si without BaCO3 contamination over a period of 2 h at temperatures as low as 45 and 52.5 degrees C, respectively, while the formation of BaTiO3 on bulk Ti required temperatures exceeding 60 degrees C for the same reaction time. Field-emission-scanning electron microscopy revealed that BaTiO3 films exhibited a nanospherical-like morphology. The kinetic formation diagrams of BaTiO3 films on the substrates were generated. The growth rate of BaTiO3 on TiN/Si was much faster than that on Ti/Si and bulk Ti, which was due to the different nature of the titanium source. The growth kinetics was also analyzed and discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3367745] All rights reserved.
URI: http://hdl.handle.net/11455/70460
ISSN: 0013-4651
DOI: 10.1149/1.3367745
Appears in Collections:期刊論文

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.