Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70466
標題: The effect of the nucleation temperature on the variation of the microstructure of Czochralski silicon after two- and three-step anneals
作者: Kung, C.Y.
Tsuy, F.C.
Lee, H.M.
關鍵字: precipitation retardation phenomenon;oxygen precipitation;crystals;carbon
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 146, Issue 12, Page(s) 4634-4639.
摘要: 
Two-step and three-step anneals were applied systematically to a set of commercial Czochralski silicon wafers. The microdefects generated during the anneals were decorated with Wright etchant and investigated by optical microscopy. The types of microdefect generated were observed to vary with the time and temperatures of the nucleation anneal. The observations provide very useful information relevant to the control of microdefects in Czochralski silicon to improve the gettering efficiency. (C) 1999 The Electrochemical Society. S0013-4651(99)04-045-8. All rights reserved.
URI: http://hdl.handle.net/11455/70466
ISSN: 0013-4651
DOI: 10.1149/1.1392686
Appears in Collections:期刊論文

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