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|標題:||Effects of deposition and annealing temperatures on the electrical and optical properties of Ag2O and Cu2O-Ag2O thin films||作者:||Tseng, C.C.
|關鍵字:||silver-oxide films;electronic-structure;oxygen||Project:||Journal of Vacuum Science & Technology A||期刊/報告no：:||Journal of Vacuum Science & Technology A, Volume 28, Issue 4, Page(s) 791-794.||摘要:||
Ag2O and Ag2O-Cu2O films were deposited on glass substrates by magnetron sputtering of Ag and Cu targets at various substrate temperatures. After deposition, some of these films were annealed using a rapid thermal annealing system, with the variation of temperature. An UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. On annealing, Ag2O (hexagonal) phase would slowly change to Ag +Ag2O (cubic) phases when the annealing temperature is greater than 200 degrees C. When the annealing temperature was higher than 450 degrees C, the Ag2O phase would transform into a metallic Ag phase completely. Accordingly, the band gap of these films will change, along with the optical and electrical properties. In the study of Ag2O-Cu2O films, it is found that these two-phase composite films could exist obviously when deposited at room temperature. The photoinduced current of these composite films could be increased significantly, compared with that of a single Cu2O phase. This is most likely due to that a large band gap semiconductor (Cu2O) is coupled with a small band gap semiconductor (Ag2O). (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3425638]
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