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標題: Power effect of ZnO:Al film as back reflector on the performance of thin-film solar cells
作者: Lin, Y.S.
Lien, S.Y.
Wang, C.C.
Liu, C.Y.
Nautiyal, A.
Wuu, D.S.
Tsai, P.C.
Chen, C.F.
Lee, S.J.
關鍵字: zinc-oxide films;al films;optical-properties;evaporating method;gel;technique;rf
Project: Journal of Vacuum Science & Technology A
期刊/報告no:: Journal of Vacuum Science & Technology A, Volume 30, Issue 1.
Aluminum-doped zinc oxide (AZO) is attracting interest as a potential transparent conducting oxide material for use in amorphous silicon (a-Si) thin-film solar cells. The absorption loss in the n-a-Si:H/Ag interface of the p-i-n thin film solar is high because the extinction coefficient of the Ag that is used as a back reflector is high. In this work, transparent conducting AZO films with a power in the range 500 W to 900 W prepared under Ar-ambient at a substrate temperature of 25 degrees C by RF-magnetron in-line sputtering. To minimize the absorption loss at longer wavelengths, an AZO layer we inserted at the n-a-Si: H/Ag interface of a solar cell with a glass/SnO(2):F/p-a-SiC:H/buffer-layer/i-a-Si:H/n-a-Si:H/Ag structure and the performance of the cell with AZO/Ag deposited instead of Ag on the back contact, was investigated. The effects of the RF-magnetron sputtering deposition parameters on the optical, electrical and structural properties of the AZO films were analyzed. Optimized AZO films with high transmittance (> 80%) and low resistivity (1.47 x 10(-3) X-cm) in the wavelength range 400-800 nm were obtained under the sputtering conditions. The p-i-n a-Si solar cell with the AZO/Ag back contact had a conversion efficiency of 9.42%, which was higher than that (7.36%) of the cell without the AZO/Ag back contact. Light-soaking of these cells for 1000 h at 60 degrees C led to stabilization at 8.32% for the best cell. The relative typical efficiency degradation of about 10% for single-junction cells demonstrates that this treatment does not negatively influence stability. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3667109]
ISSN: 0734-2101
DOI: 10.1116/1.3667109
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