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|標題:||Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography||作者:||Huang, H.W.
|關鍵字:||GaN;Light emitting diodes (LEDs);Nano-hole patterned sapphire;substrate (NHPSS);Nano-imprint lithography (NIL);omnidirectional reflector;efficiency;leds;enhancement;extraction||Project:||Materials Science and Engineering B-Advanced Functional Solid-State Materials||期刊/報告no：:||Materials Science and Engineering B-Advanced Functional Solid-State Materials, Volume 164, Issue 2, Page(s) 76-79.||摘要:||
In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. (C) 2009 Elsevier B.V. All rights reserved.
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