Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70667
DC FieldValueLanguage
dc.contributor.authorHuang, H.W.en_US
dc.contributor.authorLin, C.H.en_US
dc.contributor.authorHuang, J.K.en_US
dc.contributor.authorLee, K.Y.en_US
dc.contributor.authorLin, C.F.en_US
dc.contributor.authorYu, C.C.en_US
dc.contributor.authorTsai, J.Y.en_US
dc.contributor.authorHsueh, R.en_US
dc.contributor.authorKuo, H.C.en_US
dc.contributor.authorWang, S.C.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-11T06:00:09Z-
dc.date.available2014-06-11T06:00:09Z-
dc.identifier.issn0921-5107zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70667-
dc.description.abstractIn this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationMaterials Science and Engineering B-Advanced Functional Solid-State Materialsen_US
dc.relation.ispartofseriesMaterials Science and Engineering B-Advanced Functional Solid-State Materials, Volume 164, Issue 2, Page(s) 76-79.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.mseb.2009.07.006en_US
dc.subjectGaNen_US
dc.subjectLight emitting diodes (LEDs)en_US
dc.subjectNano-hole patterned sapphireen_US
dc.subjectsubstrate (NHPSS)en_US
dc.subjectNano-imprint lithography (NIL)en_US
dc.subjectomnidirectional reflectoren_US
dc.subjectefficiencyen_US
dc.subjectledsen_US
dc.subjectenhancementen_US
dc.subjectextractionen_US
dc.titleInvestigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithographyen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.mseb.2009.07.006zh_TW
item.languageiso639-1en_US-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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