Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70668
標題: Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
作者: Huang, H.W.
Kao, C.C.
Hsueh, T.H.
Yu, C.C.
Lin, C.F.
Chu, J.T.
Kuo, H.C.
Wang, S.C.
關鍵字: gallium nitride (GaN);nanorod;nickel;inductively coupled plasma (ICP);gallium nitride nanorods;assisted catalytic growth;nanowires
Project: Materials Science and Engineering B-Solid State Materials for Advanced Technology
期刊/報告no:: Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 113, Issue 2, Page(s) 125-129.
摘要: 
We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70668
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.07.004
Appears in Collections:期刊論文

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