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|標題:||Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching||作者:||Huang, H.W.
|關鍵字:||gallium nitride (GaN);nanorod;nickel;inductively coupled plasma (ICP);gallium nitride nanorods;assisted catalytic growth;nanowires||Project:||Materials Science and Engineering B-Solid State Materials for Advanced Technology||期刊/報告no：:||Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 113, Issue 2, Page(s) 125-129.||摘要:||
We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
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