Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70669
標題: Investigation of GaN LED with Be-implanted Mg-doped GaN layer
作者: Huang, H.W.
Kao, C.C.
Chu, J.T.
Kuo, H.C.
Wang, S.C.
Yu, C.C.
Lin, C.F.
關鍵字: Gallium nitride (GaN);light emitting diode (LED);light-emitting-diodes;p-type gan;ion-implantation;ohmic contacts;quantum-wells;beryllium;blue;semiconductors
Project: Materials Science and Engineering B-Solid State Materials for Advanced Technology
期刊/報告no:: Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 113, Issue 1, Page(s) 19-23.
摘要: 
We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70669
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.05.024
Appears in Collections:期刊論文

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