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|標題:||Wetting Transition of Grain Boundaries in Tin-Rich Indium-Based Alloys and Its Influence on Electrical Properties||作者:||Yeh, C.H.
|關鍵字:||gram boundary;wetting phase transition;electrical conductivity;tin-indium alloy;grain boundaries;microstructure;sn-in solders;phase-transitions;zn-sn;polycrystals;interconnect;diagrams;systems;growth;ga;bi||Project:||Materials Transactions||期刊/報告no：:||Materials Transactions, Volume 51, Issue 9, Page(s) 1677-1682.||摘要:||
The microstructural evolution of tin-rich indium-based alloys after the grain boundary wetting phase transition in the (liquid + gamma) two phase region of the tin-indium phase diagram us influence on the electrical conductivity were investigated Five tin-indium alloys Sn(75)In(25) Sn(70)In(30) Sn(65)In(35) Sn(60)In(40) and Sn(55)In(45) were annealed between 393 and 454 K for 24 h The melted area of the grain boundary triple junctions and cram boundaries increased with increasing the annealing temperature The microstructures of as prepared specimens of Sn(75)In(25) and Sn(70)In(30) alloys had different amounts of completely vetted cram boundaries after annealing The XRD results show the changes in phases that underwent the eutectic transformation during clue aching from various annealing temperatures The electrical conductivity of annealed tin indium specimens v. oh various microstructures was measured It increased with both annealing temperature and tin content [doi 10 2320/matertrans M2010159]
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