Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70719
標題: GaAs MESFET rf I-V curve through unique determination of small-signal circuit parameters from measured S parameters
作者: Meng, C.C.
Huang, G.H.
關鍵字: MESFET;S parameters;high-frequency I-V;GaAs;equivalent-circuit
Project: Microwave and Optical Technology Letters
期刊/報告no:: Microwave and Optical Technology Letters, Volume 34, Issue 6, Page(s) 426-427.
摘要: 
A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I-V curve for uniform-doped MESFETs. No dc measurement is needed in this method. The resulting rf I-V curve differs from the static dc I-V curve and is useful to predict rf performance. (C) 2002 Wiley Periodicals, Inc.
URI: http://hdl.handle.net/11455/70719
ISSN: 0895-2477
DOI: 10.1002/mop.20139
Appears in Collections:期刊論文

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