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|標題:||GaAs MESFET rf I-V curve through unique determination of small-signal circuit parameters from measured S parameters||作者:||Meng, C.C.
|關鍵字:||MESFET;S parameters;high-frequency I-V;GaAs;equivalent-circuit||Project:||Microwave and Optical Technology Letters||期刊/報告no：:||Microwave and Optical Technology Letters, Volume 34, Issue 6, Page(s) 426-427.||摘要:||
A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I-V curve for uniform-doped MESFETs. No dc measurement is needed in this method. The resulting rf I-V curve differs from the static dc I-V curve and is useful to predict rf performance. (C) 2002 Wiley Periodicals, Inc.
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