Please use this identifier to cite or link to this item:
http://hdl.handle.net/11455/70769
標題: | Fabrication and characterization of high-T(c) YBa(2)Cu(3)O(7-x) nanoSQUIDs made by focused ion beam milling | 作者: | Wu, C.H. Chou, Y.T. Kuo, W.C. Chen, J.H. Wang, L.M. Chen, J.C. Chen, K.L. Sou, U.C. Yang, H.C. Jeng, J.T. |
關鍵字: | quantum interference device | Project: | Nanotechnology | 期刊/報告no:: | Nanotechnology, Volume 19, Issue 31. | 摘要: | We have fabricated high-T(c) nanoscale superconducting quantum interference devices (nanoSQUIDs) with a hole size of 250 nm x 250 nm based on a 100 nm bridge at 77 K by focused ion beam milling and ion implantation. At 78 K, the curve of the voltage branch became roughly linear and agreed with the Josephson-like behavior. The sample exhibited strong flux flow behavior at temperatures under 76 K. The voltage flux characteristic curves, V-I(mod), of the nanoSQUID at different bias currents at 78 K were observed. Typically, critical currents of 15 mu A and peak-to-peak values of the voltage flux transfer function of 3.7 mu V were measured. The measured data strongly suggest that the weak link structure could be a superconducting metal with a critical temperature T(c)' smaller than that (T(c)) of other YBa(2)Cu(3)O(7-x) (YBCO) films. This fabrication method of combining a nanobridge and ion implantation can improve the yield of nanojunctions and nanoSQUIDs. |
URI: | http://hdl.handle.net/11455/70769 | ISSN: | 0957-4484 | DOI: | 10.1088/0957-4484/19/31/315304 |
Appears in Collections: | 期刊論文 |
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.