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|標題:||Fabrication and characterization of high-T(c) YBa(2)Cu(3)O(7-x) nanoSQUIDs made by focused ion beam milling||作者:||Wu, C.H.
|關鍵字:||quantum interference device||Project:||Nanotechnology||期刊/報告no：:||Nanotechnology, Volume 19, Issue 31.||摘要:||
We have fabricated high-T(c) nanoscale superconducting quantum interference devices (nanoSQUIDs) with a hole size of 250 nm x 250 nm based on a 100 nm bridge at 77 K by focused ion beam milling and ion implantation. At 78 K, the curve of the voltage branch became roughly linear and agreed with the Josephson-like behavior. The sample exhibited strong flux flow behavior at temperatures under 76 K. The voltage flux characteristic curves, V-I(mod), of the nanoSQUID at different bias currents at 78 K were observed. Typically, critical currents of 15 mu A and peak-to-peak values of the voltage flux transfer function of 3.7 mu V were measured. The measured data strongly suggest that the weak link structure could be a superconducting metal with a critical temperature T(c)' smaller than that (T(c)) of other YBa(2)Cu(3)O(7-x) (YBCO) films. This fabrication method of combining a nanobridge and ion implantation can improve the yield of nanojunctions and nanoSQUIDs.
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