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|標題:||Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands||作者:||Chiu, C.H.
|關鍵字:||gallium nitride nanorods||Project:||Nanotechnology||期刊/報告no：:||Nanotechnology, Volume 18, Issue 44.||摘要:||
We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.
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