Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70771
DC FieldValueLanguage
dc.contributor.authorYao, H.H.en_US
dc.contributor.authorWang, Y.T.en_US
dc.contributor.authorOu-yang, M.C.en_US
dc.contributor.authorKuo, H.C.en_US
dc.contributor.authorWang, S.C.en_US
dc.contributor.authorLin, C.F.en_US
dc.date2006zh_TW
dc.date.accessioned2014-06-11T06:00:18Z-
dc.date.available2014-06-11T06:00:18Z-
dc.identifier.issn0957-4484zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70771-
dc.description.abstractA 16-pair GaN/AlN structure with GaN nano-structures at the hetero-interface was grown by a metallorganic chemical vapour deposition (MOCVD) system. From the atomic force microscopy (AFM) analysis of the AlN Surface grown on the GaN/sapphire template, there are many nano-trenches and nano-holes with a density of about 5 x 10(8) cm(-2). These GaN nano-structures fill the AlN nano-holes with a dimension of 40 x 40 nm(2) in width and depth, and with a line density of 6 x 10(4) cm(-1). Furthermore, these GaN nano-structures will be propagated and self-aligned in the growth direction. The photoluminescence (PL) measurement showed that there are bright and dark emission areas on the surface of the 16-pair GaN/AlN structure; the PL intensity at the bright region was ten times stronger than the dark region, and this stronger GaN peak has the blue-shift property caused by a quantum confined effect. In the end, we concluded that the V-shape GaN nano-structures filling the AlN nano-hole structure have a strongly quantum confined effect depending on the temperature and the power dependent PL results.en_US
dc.language.isoen_USzh_TW
dc.relationNanotechnologyen_US
dc.relation.ispartofseriesNanotechnology, Volume 17, Issue 3, Page(s) 664-667.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0957-4484/17/3/008en_US
dc.subjectphase epitaxy growthen_US
dc.subjectquantum dotsen_US
dc.subjectv-defectsen_US
dc.subjectphotoluminescenceen_US
dc.subjectheterostructuresen_US
dc.subjectsuperlatticesen_US
dc.subjectmicroscopyen_US
dc.subjectmocvden_US
dc.subjectalnen_US
dc.titleFormation and optical properties of GaN/AlN multi-stacks with GaN nano-structures by metallorganic chemical vapour depositionen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1088/0957-4484/17/3/008zh_TW
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:期刊論文
Show simple item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.