Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70774
標題: Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
作者: Lin, Z.C.
Hsieh, W.H.
Lee, C.P.
Suen, Y.W.
關鍵字: growth;epitaxy;inp
Project: Nanotechnology
期刊/報告no:: Nanotechnology, Volume 18, Issue 7.
摘要: 
Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions.
URI: http://hdl.handle.net/11455/70774
ISSN: 0957-4484
DOI: 10.1088/0957-4484/18/7/075403
Appears in Collections:期刊論文

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