Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70775
標題: Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
作者: Huang, H.W.
Kuo, H.C.
Chu, J.T.
Lai, C.F.
Kao, C.C.
Lu, T.C.
Wang, S.C.
Tsai, R.J.
Yu, C.C.
Lin, C.F.
關鍵字: light-emitting-diodes;efficiency;output;improvement;surface;enhancement
Project: Nanotechnology
期刊/報告no:: Nanotechnology, Volume 17, Issue 12, Page(s) 2998-3001.
摘要: 
This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN - GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls.
URI: http://hdl.handle.net/11455/70775
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/12/030
Appears in Collections:期刊論文

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