Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70777
標題: Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots
作者: Chen, H.M.
Kuan, C.H.
Suen, Y.W.
Luo, G.L.
Lai, Y.P.
Wang, F.M.
Chen, S.T.
關鍵字: covered si(001) nanostructures;islands;arrays;photodetector;diffusion;surfaces;growth
Project: Nanotechnology
期刊/報告no:: Nanotechnology, Volume 23, Issue 1.
摘要: 
We demonstrate the effect of the pre-growth heat treatment process on the nucleation properties of Ge dots grown on pit-patterned Si(001) substrates. The prefabricated 200 nm diameter pits inherently evolve into truncated inverted pyramids (TIPs) with < 110 > base edges and a 7 degrees-9 degrees sidewall slope during heat treatment; this morphology transformation is robust against variations in shape and orientation of the pit patterns. Uniform Ge dots with an areal density of 4 x 10(9) cm(-2) were obtained on the Si substrates having TIPs. Each TIP contains four aligned Ge dots locating symmetrically with respect to < 110 >. These dots exhibit an elliptical dome shape with major axis oriented along < 100 >. The nucleation position, shape and spatial orientation of these Ge dots coincide with the calculated surface chemical potential distribution of the TIP.
URI: http://hdl.handle.net/11455/70777
ISSN: 0957-4484
DOI: 10.1088/0957-4484/23/1/015303
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